Webb24 aug. 2016 · I need to fabricate nanowires of 70 nm thickness and width of (170nm -400nm) using EBL Raith 150, I'm using Bilayer PMMA of 300 nm thickness. WebbEvery system in Raith’s broad portfolio has its own specification and strength. Find out which of our systems can best solve your nanofabrication task, and download our product information. Brochures …
北京凝聚态物理国家实验室 - 物理学院 - UCAS
Webb31 mars 2024 · Raith150 Two Ultra-High Resolution Electron Beam Lithography and Imaging. Since its launch, the RAITH150 Two has proven itself as a winner among universal, high-resolution electron beam lithography systems. This advanced solution is used in research and nanotechnology centers around the world and has established its … http://www.lxyee.net/Product/detail/id/223.html email signature for attorney
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WebbThe Raith 150 is an ultra-high resolution electron beam lithography system used for writing complex patterns in resists at resolutions of 50 nm for direct-write lithographic … Webb19 nov. 2014 · Resolution limit: forward scattering and beam diameter Figure 3-19: Beam diameter as a function of beam energy as measured in the MIT Raith-150 system. While beam diameter is inexplicably large at voltages below 10kV, it seems to be reasonably close to its 3-4 nm specification at higher kV, suggesting that beam diameter is not the … Webb主要规格&技术指标. TFE filament with beam size ≤ 1.6 nmBeam current range 5 pA–20 nABeam energy 20 eV–30 keVStage travel range 150 x 150 x 20 mmCurrent density ≥ 7,500 A/cm2Current stability ≤ 0.5 % / 8 hoursMinimum line width < 8 nm guaranteedStitching accuracy ≤ 35 nm (mean +3 σ)Overlay accuracy ≤ 35 nm (mean +3 σ) email signature format online